Edge effects in silicon pad diodes

Author: 
E.Fretwurst, E.Garutti, M. Hufschmidt, R. Klanner, J. Schwandt, B. Tohermes
IEEE NSS-MIC 2016
Date: 
Oct 2016
Miscellaneous Material: 

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Cross section of investigated diodes

IV curves for non-irradiated 320 um FZ-deep diffused diodes

Voltage dependence of total, planar and edge capacitance for non-irradiated 320 um FZ-deep diffused diodes

Capacitance measurements, edge correction and doping profile for non-irradiated 200 um thick FZ diodes (non-deep diffused)

IV curves for irradiated 320 um FZ-deep diffused diodes

Voltage and frequency dependence of total, planar and edge capacitance for an irradiated large diode (fluence = 2.4 10$^{15}$ cm$^{-1}$)

Voltage and frequency dependence of total, planar and edge capacitance for an irradiated small diode (fluence = 2.4 10$^{15}$ cm$^{-1}$)