Construction of a measurement - station for Silicon-Strip-Detectors (ALIBAVA)

Victor Darius Danescu
Jun 2011

Thesis Type:

In this thesis, a measurement station was designed for silicon strip detectors and put into operation in order to collect first experiences, which can then be used in a final setup to systematically study irradiated silicon strip detectors. As a readout system the relatively new ALIBAVA readout system was used. With it, the investigation of both irradiated and non-irradiated detectors of both polarities (n-or p-doped) is possible. The detector used in the framework of this thesis was a unirradiated silicon strip detector with 98 strips and a pitch of 80 μm, p-doped on n-material, that means its built of p-doped strips on n-doped material. The first measurements were made without a bonded detector to study the ALIBAVA readout system and its influence on the whole system and consequently on subsequent measurements. After the detector was bonded to the ALIBAVA-read-out-system first investigating measurements on the noise properties of the measurement station aiming an effective noise reduction of the whole system. Having succeeded this charge accumulation in the detector were investigated, first using a laser (a light source) after this a radioactive (_) source (a particle source). The results of the ALIBAVA measurement station confirmed mostly the theoretical expectations and the results developers of the ALIBAVA system distributed. The ALIBAVA measurement station provided important insights to realize, in the next step, an ultimate measurement station with ALIBAVA readout system for the systematic investigation of irradiated silicon strip detectors. To understand charge generation and collection in a semiconductor detector better, at the beginning of this work before the construction of the measurement station, current-voltage and capacitance-voltage measurements on different silicon pad diodes were performed. The purpose was to understand the effect of radiation in a silicon strip detector better. An isothermic annealing study of an irradiated detector at 80 _C was performed to study the annealing of radiation damages in the detector. The motivation for these studies, is to get an impression of the relation of radiation damages and their effects on macroscopic properties and also to understand the principle of charge generation and charge collection in the volume of the detector which is fundamental to the detector performance.

PDF icon Diplomarbeit_Victor_Danescu.pdf8.98 MB